Post-annealing effects on shallow-junction characteristics caused by 20keV BGe molecular ion implantation-Reference-Cited by-同舟云学术

Post-annealing effects on shallow-junction characteristics caused by 20keV BGe molecular ion implantation

Published:2005-08 Issue:1-2 Volume:237 Page:312-317
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Liang J.H.,Sang Y.J.,Wang C.-H.,Wang T.W.,Hsu J.Y.,Niu H.,Tseng M.S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference19 articles.

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2. P. Ling, M.D. Strathman, C.H. Ling, B. Doyle, D. Walsh, L. Larson, J. Bonnett, S. Felch, in: Proceedings of the 1998 International Conference on Ion Implantation Technology, Kyoto, Japan, 22–26 June 1998, p. 1175.

3. W.-K. Chu, J. Liu, J. Jin, X. Liu, L. Shao, Q. Li, P. Ling, in: Proceedings of the Sixteenth International Conference on Application of Accelerators in Research and Industry, Denton, Texas, USA, 1–4 November 2000, p. 891.

4. Formation of shallow junctions through BGe molecular ion implantation and rapid thermal annealing

5. Range parameters of Bn cluster ion implantation in silicon

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1. Shallow junction characteristics due to low temperature BGe molecular ion implantation into silicon;Applied Surface Science;2014-08

2. Characterization of damage behavior induced by low-temperature BGe molecular ion implantation in silicon;Vacuum;2013-03

3. Two-step post-annealing effects on the shallow-junction characteristics produced by BGe molecular ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-08