Formation of shallow junctions through BGe molecular ion implantation and rapid thermal annealing-Reference-Cited by-同舟云学术

Formation of shallow junctions through BGe molecular ion implantation and rapid thermal annealing

Published:2004-06 Issue: Volume:219-220 Page:778-782
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Liang J.H.,Sang Y.J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

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5. P. Ling, M.D. Strathman, C.H. Ling, B. Doyle, D. Walsh, L. Larson, J. Bonnett, S. Felch, in: Proceedings of the 1998 International Conference on Ion Implantation Technology, Kyoto, Japan, 22–26 June 1998, p. 1175

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1. Shallow junction characteristics due to low temperature BGe molecular ion implantation into silicon;Applied Surface Science;2014-08

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3. Boron depth profiles and residual damage following rapid thermal annealing of low-temperature BSi molecular ion implantation in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-08

4. Damage characteristics of low-temperature BSi molecular ion implantation in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-04

5. Two-step post-annealing effects on the shallow-junction characteristics produced by BGe molecular ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-08