Two-step post-annealing effects on the shallow-junction characteristics produced by BGe molecular ion implantation-Reference-Cited by-同舟云学术

Two-step post-annealing effects on the shallow-junction characteristics produced by BGe molecular ion implantation

Published:2006-08 Issue:1-2 Volume:249 Page:347-351
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Liang J.H.,Sang Y.J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference18 articles.

1. P. Ling, M.D. Strathman, C.H. Ling, B. Doyle, D. Walsh, L. Larson, J. Bonnett, S. Felch, in: Proceedings of the 1998 International Conference on Ion Implantation Technology, Kyoto, Japan, 22–26 June 1998, p. 1175.

2. W.-K. Chu, J. Liu, J. Jin, X. Liu, L. Shao, Q. Li, P. Ling, in: Proceedings of the Sixteenth International Conference on Application of Accelerators in Research and Industry, Denton, Texas, USA, 1–4 November 2000, p. 891.

3. Formation of shallow junctions through BGe molecular ion implantation and rapid thermal annealing

4. Post-annealing effects on shallow-junction characteristics caused by 20keV BGe molecular ion implantation

5. Cluster-ion implantation: An approach to fabricate ultrashallow junctions in silicon

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