Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions-Reference-Cited by-同舟云学术

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Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions

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Container-title:International Electron Devices Meeting. IEDM Technical Digest
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Author:

Agarwal A.,Eaglesham D.J.,Gossmann H.-J.,Pelaz L.,Herner S.B.,Jacobson D.C.,Haynes T.E.,Erokhin Y.,Simonton R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/5237/14153/00650425.pdf?arnumber=650425

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomistic modelling for boron diffusion profile in silicon posterior to germanium pre-amorphization;Microelectronic Engineering;2007-05

2. Quantitative depth profiling of ultra-shallow phosphorus implants in silicon using time-of-flight secondary ion mass spectrometry and the nuclear reaction 31P(α,p0)34S;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-09

3. Formation of shallow junctions through BGe molecular ion implantation and rapid thermal annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-06

4. Ultrashallow junction formation by point defect engineering;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004

5. Optimized Source/Drain Ion Implantation Conditions for P-Channel Metal–Oxide–Semiconductor Field-Effect-Transistor Formation;Japanese Journal of Applied Physics;2003-12-10

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