Reduction of boron transient enhanced diffusion in silicon by low-energy cluster ion implantation-Reference-Cited by-同舟云学术

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Reduction of boron transient enhanced diffusion in silicon by low-energy cluster ion implantation

Published:1998-07 Issue:1-3 Volume:54 Page:80-83
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Shimada Norihiro,Aoki Takaaki,Matsuo Jiro,Yamada Isao,Goto Kenichi,Sugui T.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference13 articles.

1. Ion implantation from the past and into the future

2. Proc. of Int. Elec. Dev. Meeting;Goto,1996

3. Shallow junction formation by polyatomic cluster ion implantation

4. Study of Ar cluster ion bombardment of a sapphire surface

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1. Reactive etching by ClF3–Ar neutral cluster beam with scanning;Japanese Journal of Applied Physics;2016-05-09

2. Recent Developments of Cluster Ion Beam —From Nano-fabrication to Analysis of Bio-materials—;Journal of the Vacuum Society of Japan;2016

3. Shallow junction characteristics due to low temperature BGe molecular ion implantation into silicon;Applied Surface Science;2014-08

4. Ion-induced damage evaluation with Ar cluster ion beams;Surface and Interface Analysis;2012-06-05

5. Etching of metallic materials with Cl2 gas cluster ion beam;Surface and Coatings Technology;2011-11

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