Author:
Takeuchi D.,Shimada N.,Matsuo J.,Yamada I.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
1. Ion implantation from the past and into the future
2. Surface modification with gas cluster ion beams
3. J. Matsuo, M. Akizuki, J.A. Northby, G.H. Takaoka and I. Yamada, Proc. of ICSSPIC-7, Surf. Rev. Lett., in press.
4. D. Takeuchi, J. Matsuo, A. Kitai and I. Yamada, Mater. Sci. Eng. A, in press.
5. B diffusion in Si predamaged with Si+near the threshold dose of amorphization
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4. Characterization of radiation damage induced by B and B4 ion implantation into silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-12
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