Range parameters of Bn cluster ion implantation in silicon-Reference-Cited by-同舟云学术

Range parameters of Bn cluster ion implantation in silicon

Published:2004-06 Issue: Volume:219-220 Page:783-787
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Liang J.H.,Han H.M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference17 articles.

1. Cluster-ion implantation: An approach to fabricate ultrashallow junctions in silicon

2. Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation

3. W.-K. Chu, J. Liu, J. Jin, X. Liu, L. Shao, Q. Li, P. Ling, in: Proceedings of the Sixteenth International Conference on Application of Accelerators in Research and Industry, Denton, TX, USA, 1–4 November 2000, p. 891

4. Effect of implant temperature on transient enhanced diffusion of boron in regrown silicon after amorphization by Si+ or Ge+ implantation

5. Point defect‐based modeling of diffusion and electrical activation of ion implanted boron in crystalline silicon

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