Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125821
Reference9 articles.
1. Transient Phosphorus Diffusion Below the Amorphization Threshold
2. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
3. {311} defects in silicon: The source of the loops
4. Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion
5. Evolution of {311} type defects in boron-doped structures: Experimental evidence of boron–interstitial cluster formation
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