Evolution of {311} type defects in boron-doped structures: Experimental evidence of boron–interstitial cluster formation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123749
Reference6 articles.
1. B diffusion and clustering in ion implanted Si: The role of B cluster precursors
2. Role of C and B clusters in transient diffusion of B in silicon
3. Implantation and transient B diffusion in Si: The source of the interstitials
4. Interactions of ion‐implantation‐induced interstitials with boron at high concentrations in silicon
5. A systematic analysis of defects in ion-implanted silicon
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1. Interaction of ion-implantation-induced interstitials in B-doped SiGe;Materials Science in Semiconductor Processing;2007-02
2. Impact of dopant profiles on the end of range defects for low energy germanium preamorphized silicon;Materials Science and Engineering: B;2004-12
3. Impact of the end of range damage from low energy Ge preamorphizing implants on the thermal stability of shallow boron profiles;Journal of Applied Physics;2004-11
4. A Simplified Picture for Transient Enhanced Diffusion of Boron in Silicon;Journal of The Electrochemical Society;2004
5. Process Modeling for Advanced Devices;MRS Proceedings;2004
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