B diffusion and clustering in ion implanted Si: The role of B cluster precursors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118839
Reference9 articles.
1. Implantation and transient B diffusion in Si: The source of the interstitials
2. Trap‐limited interstitial diffusion and enhanced boron clustering in silicon
3. Carbon incorporation in silicon for suppressing interstitial‐enhanced boron diffusion
4. Point defects and dopant diffusion in silicon
5. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena
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