Implantation and transient B diffusion in Si: The source of the interstitials
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112725
Reference18 articles.
1. Transient diffusion of ion‐implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles
2. The diffusivity of silicon self-interstitials
3. Anomalous transient diffusion of ion implanted dopants: A phenomenological model
4. Use of type II (end of range) damage as ‘‘detectors’’ for quantifying interstitial fluxes in ion‐implanted silicon
5. A study of point defect detectors created by Si and Ge implantation
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