Transient diffusion of ion‐implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346910
Reference26 articles.
1. Transient boron diffusion in ion‐implanted crystalline and amorphous silicon
2. Electrically active defects in shallow pre-amorphisedp + n junctions in silicon
3. Shallowp+junction formation by a reverse‐type dopant preamorphization scheme
4. Comparison of electrical defects in Ge+and Si+preamorphized BF2‐implanted silicon
5. Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
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