Atomic structures and stability of finite-size extended interstitial defects in silicon: Large-scale molecular simulations with a neural-network potential-Reference-Cited by-同舟云学术

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Atomic structures and stability of finite-size extended interstitial defects in silicon: Large-scale molecular simulations with a neural-network potential

Published:2022-06 Issue: Volume:214 Page:114650
ISSN:1359-6462
Container-title:Scripta Materialia
language:en
Short-container-title:Scripta Materialia

Author:

Ohbitsu Masato^ORCID,Yokoi Tatsuya^ORCID,Noda Yusuke^ORCID,Kamiyama Eiji,Ushiro Takuto,Nagakura Hiroki,Sueoka Koji,Matsunaga Katsuyuki

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,Mechanics of Materials,Metals and Alloys,Mechanical Engineering

Reference46 articles.

1. Point defects and dopant diffusion in silicon

2. Transient diffusion of ion‐implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles

3. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

4. Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon

5. Shouldering in B diffusion profiles in Si: Role of di-boron diffusion

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A unified moment tensor potential for silicon, oxygen, and silica;npj Computational Materials;2024-09-13

2. Dynamic interaction between dislocations and obstacles in bcc iron based on atomic potentials derived using neural networks;Physical Review Materials;2023-06-27

3. Comprehensive structural changes in nanoscale-deformed silicon modelled with an integrated atomic potential;Materialia;2023-05

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