Effect of fluorine on the diffusion of boron in ion implanted Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122146
Reference3 articles.
1. Dose-rate effects on the formation of ultra-shallow junctions with low-energy B+ and BF2+ ion implants
2. Diffusion of ion implanted boron in preamorphized silicon
3. Effect of implant temperature on transient enhanced diffusion of boron in regrown silicon after amorphization by Si+ or Ge+ implantation
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