Fluorine Passivation of Defects and Interfaces in Crystalline Silicon
Author:
Affiliation:
1. School of Engineering, The Australian National University, Canberra, ACT 2601, Australia
2. SIMS and Microscopy Facility, Western Sydney University, Sydney, NSW 2753, Australia
Funder
Australian Centre for Advanced Photovoltaics
Australian Renewable Energy Agency
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.1c07221
Reference57 articles.
1. Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment
2. Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
3. Passivation and depassivation of silicon dangling bonds at the Si/SiO2interface by atomic hydrogen
4. Hydrogen passivation of defects in multicrystalline silicon solar cells
5. Hydrogenation in multicrystalline silicon: The impact of dielectric film properties and firing conditions
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