Passivation and depassivation of silicon dangling bonds at the Si/SiO2interface by atomic hydrogen
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110758
Reference12 articles.
1. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I
2. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
3. 29Si hyperfine structure of unpaired spins at the Si/SiO2interface
4. Chemical kinetics of hydrogen and (111) Si‐SiO2interface defects
5. Maximum density ofPbcenters at the (111) Si/SiO2interface after vacuum anneal
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