Maximum density ofPbcenters at the (111) Si/SiO2interface after vacuum anneal
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104191
Reference20 articles.
1. Characterization of Si/SiO2 interface defects by electron spin resonance
2. Electron spin resonance of [11̄1], [1̄11], and [111̄] oriented dangling orbitalPb0defects at the (111) Si/SiO2interface
3. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
4. Strain broadening of the dangling-bond resonance at the (111)Si-SiO2interface
5. 29Si hyperfine structure of unpaired spins at the Si/SiO2interface
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