Characterization of Si/SiO2 interface defects by electron spin resonance-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Characterization of Si/SiO2 interface defects by electron spin resonance

Published:1983-01 Issue:3 Volume:14 Page:201-294
ISSN:0079-6816
Container-title:Progress in Surface Science
language:en
Short-container-title:Progress in Surface Science

Author:

Poindexter Edward H.,Caplan Philip J.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference82 articles.

1. Insulating Films on Semiconductors;Wolters,1981

2. Insulating Films on Semiconductors;Risch,1981

3. The Physics of SiO2 and its Interfaces;McGarrity,1978

4. MOS (Metal-Oxide-Semiconductor) Physics and Technology;Nicollian,1982

5. Electron Spin Resonance: Elementary Theory and Applications;Wertz,1972

Cited by 214 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanism of quantum yield enhancement in Si quantum dots by high-pressure water vapor annealing from single-dot studies;Applied Physics Letters;2024-08-12

2. Computing elastic tensors of amorphous materials from first-principles;Computational Materials Science;2024-06

3. Crystalline Si Surface Passivation with Nafion for Bulk Defects Detection with Electron Paramagnetic Resonance;ACS Applied Materials & Interfaces;2024-04-23

4. Radical, Ion, and Photon's Effects on Defect Generation At Sio2/Si Interface During Plasma Etching;2024

5. Electron Spin–Lattice Relaxation of Substitutional Nitrogen in Silicon: The Role of Disorder and Motional Effects;Nanomaterials;2023-12-20

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP