Interface traps and quantum size effects on the retention time in nanoscale memory devices
Author:
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/1556-276X-8-369.pdf
Reference16 articles.
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3. Stesmans A, Van Gorp G: Maximum density of Pb centers at the (111) Si/SiO2 interface after vacuum anneal. Appl Phys Lett 1990, 57: 2663. 10.1063/1.104191
4. Akca IB, Dâna A, Aydinli A, Turan R: Comparison of electron and hole charge–discharge dynamics in germanium nanocrystal flash memories. Appl Phys Lett 2008, 92: 052103. 10.1063/1.2835455
5. Hdiy AE, Gacem K, Troyon M, Ronda A, Bassani F, Berbezier I: Germanium nanocrystal density and size effects on carrier storage and emission. J Appl Phys 2008, 104: 063716. 10.1063/1.2985909
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