Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3497014
Reference22 articles.
1. Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
2. On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
3. Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
4. Silicon surface passivation by ultrathin Al2O3films synthesized by thermal and plasma atomic layer deposition
5. Metalorganic chemical vapor deposition of aluminum oxide on Si: Evidence of interface SiO2 formation
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