Hydrogenation in multicrystalline silicon: The impact of dielectric film properties and firing conditions-Reference-Cited by-同舟云学术

Hydrogenation in multicrystalline silicon: The impact of dielectric film properties and firing conditions

Published:2019-10-28 Issue:6 Volume:28 Page:493-502
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog Photovolt Res Appl

Author:

Sio Hang Cheong¹^ORCID,Phang Sieu Pheng¹,Nguyen Hieu T.¹,Hameiri Ziv²,Macdonald Daniel¹

Affiliation:

1. Research School of Electrical, Energy and Materials Engineering The Australian National University Canberra Australian Capital Territory Australia

2. School of Photovoltaic and Renewable Energy Engineering The University of New South Wales Sydney New South Wales Australia

Funder

Australian Centre for Advanced Photovoltaics

Australian Renewable Energy Agency

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pip.3199

Reference57 articles.

1. Hydrogen in crystalline semiconductors

2. Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment

3. Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

4. Direct comparison of the electrical properties of multicrystalline silicon materials for solar cells: conventional p-type, n-type and high performance p-type

5. Hydrogen passivation of defects in multicrystalline silicon solar cells

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