Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2227863
Reference14 articles.
1. Mechanisms of B deactivation control by F co-implantation
2. Annealing behavior of low-energy ion-implanted phosphorus in silicon
3. Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface
4. Energetics of Self-Interstitial Clusters in Si
5. Role of silicon interstitials in boron cluster dissolution
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