Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2227863
Reference14 articles.
1. Mechanisms of B deactivation control by F co-implantation
2. Annealing behavior of low-energy ion-implanted phosphorus in silicon
3. Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface
4. Energetics of Self-Interstitial Clusters in Si
5. Role of silicon interstitials in boron cluster dissolution
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2. Atomistic simulations on the relationship between solid-phase epitaxial recrystallization and self-diffusion in amorphous silicon;Journal of Applied Physics;2022-01-21
3. 3D atomic-scale investigation of carbon segregation in phosphorus co-implanted silicon;Applied Physics Letters;2019-09-23
4. Deactivation of Phosphorus by Carbon in Recrystallized Silicon;ECS Journal of Solid State Science and Technology;2019
5. Effect of carbon on boron diffusion and clustering in silicon: Temperature dependence study;Journal of Applied Physics;2018-10-21
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