Annealing behavior of low-energy ion-implanted phosphorus in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1929861
Reference26 articles.
1. Boron-enhanced diffusion of boron from ultralow-energy ion implantation
2. Analysis of ultrashallow doping profiles obtained by low energy ion implantation
3. The production and use of ultralow energy ion beams
4. Athermal annealing at room temperature and enhanced activation of low- energy boron implants with high-energy Si coimplantation
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