Atomistic simulations on the relationship between solid-phase epitaxial recrystallization and self-diffusion in amorphous silicon
Author:
Affiliation:
1. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden—Rossendorf, 01328 Dresden, Germany
2. Institute of Materials Physics, University of Münster, 48149 Münster, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0078015
Reference119 articles.
1. Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions
2. Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon
3. The physics of amorphous-silicon thin-film transistors
4. Photovoltaic Technology: The Case for Thin-Film Solar Cells
5. 25th Anniversary Article: Understanding the Lithiation of Silicon and Other Alloying Anodes for Lithium-Ion Batteries
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