Kinetics of the end of range damage dissolution in flash-assist rapid thermal processing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2201043
Reference9 articles.
1. A systematic analysis of defects in ion-implanted silicon
2. Transition from small interstitial clusters to extended {311} defects in ion-implanted Si
3. Defect Evolution in Ion Implanted Si: from Point to Extended Defects
4. Evolution from point to extended defects in ion implanted silicon
5. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
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