Evolution from point to extended defects in ion implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365583
Reference24 articles.
1. MeV-energy B+, P+ and As+ ion implantation into Si
2. A systematic analysis of defects in ion-implanted silicon
3. Trap‐limited interstitial diffusion and enhanced boron clustering in silicon
4. Oxidation enhanced diffusion in Si B‐doping superlattices and Si self‐interstitial diffusivities
5. Transient diffusion of ion‐implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles
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