Time evolution of boron deactivation with carbon coimplantation in preamorphized silicon
Author:
Funder
Ministry of Science and Technology, Taiwan
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=8/a=081301/pdf
Reference30 articles.
1. Reduction of transient boron diffusion in preamorphized Si by carbon implantation
2. Carbon incorporation in silicon for suppressing interstitial‐enhanced boron diffusion
3. Diffusion of co-implanted carbon and boron in silicon and its effect on excess self-interstitials
4. Optimizing boron junctions through point defect and stress engineering using carbon and germanium co-implants
5. Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon
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