Diffusion of co-implanted carbon and boron in silicon and its effect on excess self-interstitials
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3702440
Reference34 articles.
1. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
2. Role of C and B clusters in transient diffusion of B in silicon
3. Reducing ultra-shallow boron diffusion using carbon and fluorine co-implantation
4. Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon
5. Co-implantation with conventional spike anneal solutions for 45 nm n-type metal-oxide-semiconductor ultra-shallow junction formation
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1. Physical mechanism underlying the enhancement effect of carbon in heavily phosphorus-doped Czochralski silicon substrate on phosphorus out-diffusion within n/n+ epitaxial wafer;Journal of Applied Physics;2024-06-17
2. Effect of carbon on boron diffusion and clustering in silicon: Temperature dependence study;Journal of Applied Physics;2018-10-21
3. Time evolution of boron deactivation with carbon coimplantation in preamorphized silicon;Japanese Journal of Applied Physics;2018-07-09
4. Diffusion of a mono-energetic implanted species with a Gaussian profile;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-09
5. Radiation‐induced interstitial carbon atom in silicon: Effect of charge state on annealing characteristics;physica status solidi (a);2017-05-29
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