Lateral straggling of implanted aluminum in 4H-SiC
Author:
Affiliation:
1. Advanced Power Semiconductor Laboratory, ETH Zurich, 8092 Zurich, Switzerland
2. Department of Physics, Center for Material Science and Nanotechnology, University of Oslo, 0316 Oslo, Norway
Funder
The Research Council of Norway
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5132616
Reference16 articles.
1. Silicon carbide: A unique platform for metal-oxide-semiconductor physics
2. Material science and device physics in SiC technology for high-voltage power devices
3. Ion implantation technology for silicon carbide
4. Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals
5. (Invited) Challenges for Ion Implantation in Power Device Processing
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