Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV-Reference-Cited by-同舟云学术

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Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV

Published:2024-08 Issue: Volume:179 Page:108461
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Belanche Manuel^ORCID,Yonezawa Yoshiyuki^ORCID,Heller René,Müller Arnold,Vockenhuber Christof,Martinella Corinna,Rüb Michael,Kato Masashi,Murata Koichi,Tsuchida Hidekazu,Nakayama Koji,Grossner Ulrike

Funder

ETH Zurich

Horizon 2020 Framework Programme

H2020 Marie Skłodowska-Curie Actions

Publisher

Elsevier BV

Reference56 articles.

1. SiC power-switching devices - the second electronics revolution;Cooper;Proc. IEEE,2002

2. Silicon Carbide, Volume 2: Power Devices and Sensors;Friedrichs,2011

3. Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications;Kimoto,2014

4. Material science and device physics in SiC technology for high-voltage power devices;Kimoto;Japan. J. Appl. Phys.,2015

5. SiC material properties;Kimoto,2019

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