Very High In‐Plane Magnetic Field Sensitivity in Ion‐Implanted 4H‐SiC PIN Diodes-Reference-Cited by-同舟云学术

Very High In‐Plane Magnetic Field Sensitivity in Ion‐Implanted 4H‐SiC PIN Diodes

Published:2024-03-27 Issue:5 Volume:10 Page:
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Okeil Hesham¹^ORCID,Erlbacher Tobias²³^ORCID,Wachutka Gerhard¹^ORCID

Affiliation:

1. Technical University of Munich 80333 Munich Germany

2. Friedrich‐Alexander University Erlangen‐Nürnberg 91058 Erlangen Germany

3. Nexperia Germany GmbH 22529 Hamburg Germany

Abstract

AbstractIn this study ion‐implanted lateral 4H‐SiC pin diodes are reported, which show an unexpectedly high room temperature in‐plane magnetic field sensitivity approaching 100 % at 0.5 Tesla. Using dedicated TCAD simulations the underlying transduction mechanism is studied, and the effect of implantation‐induced carrier traps on the observed high sensitivity is unraveled. The study shows how such traps can greatly control the injection conditions at the highly doped implant regions providing a plausible explanation for an observed portion in the IV‐characteristics of the pin diodes exhibiting the aforementioned high magnetic field sensitivity.

Funder

Technische Universität München

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202300531

Reference64 articles.

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3. R. S.Okojie V.Nguyen E.Savrun D.Lukco in2011 16th Int. Solid‐State Sensors Actuators and Microsystems Conf.IEEE2011 pp.2875.

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