Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1569972
Reference7 articles.
1. Monte Carlo simulation of ion implantation in crystalline SiC
2. Empirical depth profile simulator for ion implantation in 6Hα‐SiC
3. Channeling implantations of Al+ into 6H silicon carbide
4. Lateral spread of implanted ion distributions in 6HSiC: simulation
5. Electronic stopping power for Monte Carlo simulation of ion implantation into SiC
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