Lateral spread of implanted ion distributions in 6HSiC: simulation-Reference-Cited by-同舟云学术

Lateral spread of implanted ion distributions in 6HSiC: simulation

Published:1999-07 Issue: Volume:61-62 Page:373-377
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Morvan E.,Mestres N.,Pascual J.,Flores D.,Vellvehi M.,Rebollo J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

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3. 3D modeling of ion implantation into crystalline silicon: influence of damage accumulation on dopant profiles

4. E. Morvan et al. Proceedings of the E-MRS 1996 Spring Meeting, Strasbourg, France, pp. J–2.5

5. E. Morvan et al. Proceedings of the E-MRS 1998 Spring Meeting, Strasbourg, France, pp. A–2.

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