Monte Carlo simulation of two-dimensional implanted dopant distributions at mask edges
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference36 articles.
1. Analysis of the Tilt and Rotation Angle Dependence of Boron Distributions Implanted into <100> Silicon
2. Comparison of Measured and Simulated Two‐Dimensional Phosphorus Diffusion Profiles in Silicon
3. Reconstructed two-dimensional doping profiles from multiple one-dimensional secondary ion mass spectrometry measurements
4. A Spreading Resistance‐Based Technique for Two‐Dimensional Carrier Profiling
5. Two‐dimensional distributions of ions implanted in channeling and random directions of Si single crystals
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