Kick-out diffusion of Al in 4H-SiC: an ab initio study

Abstract

As a semiconductor with a wide bandgap, 4H silicon carbide (4H-SiC) has considerable potential for high-temperature and high-power devices. It is widely established that p-type 4H-SiC is formed predominantly by doping Al. Although Al diffusion in 4H-SiC is often negligible at low temperatures due to the tight bonding of Al in 4H-SiC, the diffusion coefficient of Al dramatically rises when the temperature is rather high. While diffusion is the most fundamental physical processes, the diffusion mechanism of Al in 4H-SiC remains unknown. Due to the large atomic radius of Al relative to the host Si/C atoms and the fact that Al occupies the Si lattice in 4H-SiC, the diffusion of Al is typically mediated by point defects such as vacancies and self-interstitials. We now investigate the diffusion of Al in 4H-SiC using first-principles calculations and compare the activation energy of Al diffusion mediated by carbon vacancies (VC) to that of Al diffusion mediated by Si interstitials (Sii). It is found that Al diffusion is actually a Sii-mediated process, in which a nearby Sii first kicks a substitutional Al atom to an interstitial site. The kicked-out Al then spreads via interstitial sites. The diffusion coefficient is calculated, which is comparable to experimental results.