Molecular dynamics study of Al implantation in 4H-SiC
Author:
Affiliation:
1. Institute for Microelectronics, TU Wien,CDL for Multi-Scale Process Modeling of Semiconductor Devices and Sensors,Vienna,Austria,1040
2. Silvaco Europe Ltd.,United Kingdom,PE27 5JL
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10319472/10319477/10319554.pdf?arnumber=10319554
Reference20 articles.
1. First-principles X-ray photoelectron spectroscopy binding energy shift calculation for boron and aluminum defects in 3C-silicon carbide
2. Molecular dynamics based cohesive zone law for describing Al–SiC interface mechanics
3. Native point defects and carbon clusters in 4H-SiC: A hybrid functional study
4. Ab initiostudy of the migration of intrinsic defects in3C−SiC
5. Merging Metadynamics into Hyperdynamics: Accelerated Molecular Simulations Reaching Time Scales from Microseconds to Seconds
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