Formation and annealing of nitrogen-related complexes in SiC
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.205202/fulltext
Reference23 articles.
1. Diffusion of nitrogen into silicon carbide single crystals doped with aluminum
2. Transient enhanced diffusion of implanted boron in 4H-silicon carbide
3. Annealing processes of vacancy‐type defects in electron‐irradiated and as‐grown 6H‐SiC studied by positron lifetime spectroscopy
4. Positron annihilation studies of defects in 3CSiC hot-implanted with nitrogen and aluminum ions
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