Annealing processes of vacancy‐type defects in electron‐irradiated and as‐grown 6H‐SiC studied by positron lifetime spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363615
Reference24 articles.
1. Silicon carbide (SiC)—Recent results in physics and in technology
2. Photoluminescence of Radiation Defects in Cubic SiC: Localized Modes and Jahn-Teller Effect
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