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Selective Generation of V2 Silicon Vacancy Centers in 4H-Silicon Carbide

  • Published:2024-02-13 Issue:7 Volume:24 Page:2369-2375
  • ISSN:1530-6984
  • Container-title:Nano Letters
  • language:en
  • Short-container-title:Nano Lett.

Author:

Xue Yongzhou1,Titze Michael2ORCID,Mack John1,Yang Zhaohui3,Zhang Liang1,Su Shei S.2,Zhang Zheshen4,Fan Linran1ORCID

Affiliation:

1. James C. Wyant College of Optical Sciences, University of Arizona, Tucson, Arizona 85721, United States

2. Sandia National Laboratories, Albuquerque, New Mexico 87185, United States

3. Department of Electrical and Computer Engineering, University of Arizona, Tucson, Arizona 85721, United States

4. Department of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85721, United States

Funder

Coherent / II-VI Foundation

Division of Engineering Education and Centers

Office of Science

Publisher

American Chemical Society (ACS)

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