Estimation of electronic stopping cross sections of 4H-SiC for 2–26 MeV Al random-ion implantations

Abstract

Abstract Electronic stopping cross sections of 4H-SiC for 2−26 MeV Al random-ion implantations (S e random) were estimated from the reported dependence of the projected range on the ion-implantation energy (E 0). The estimated S e random was a couple of times larger than the reported electronic stopping cross section along the 〈0001〉 channel and proportional to the square root of the ion energy (E) in the case E < 10 MeV. When E ranged from 10 to 26 MeV, the S e random saturated around 5 × 10−13 eV cm2 atom−1, suggesting that the Bethe-Bloch region, where S e random decreases with E, should exist at E larger than 26 MeV.