Modified El-Hoshy−Gibbons model for electronic stopping cross sections in Si and SiC for low-velocity ions with atomic numbers between 5 and 15

Abstract

Abstract The El-Hoshy−Gibbons model, which reduces not only the atomic numbers of projectiles (Z 1) and targets but also the impact parameter for small-angle collisions (R 0) in the Firsov model, was modified based on the relation between R 0 and the Kohn−Sham radii of projectiles (r KS); namely, the reduction factor y of R 0 was chosen to be 10 when R 0 was larger r KS and 5 in the case R 0 ≤ r KS. This modification improved the reproducibility of the periodic dependences of the electronic stopping cross sections in Si, as well as those in SiC, for low-velocity ions with 5 ≤ Z 1 ≤ 15.