Author:
Ahmed S.,Barbero C. J.,Sigmon T. W.,Erickson J. W.
Subject
General Physics and Astronomy
Cited by
34 articles.
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1. Effective combinations of features in predicting the range of incident ions using machine learning;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-08
2. A Short Channel Self-Alignment Process for High-Voltage VDMOSFETs in 4H-SiC;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
3. Lateral spreads of ion-implanted Al and P atoms in silicon carbide;Japanese Journal of Applied Physics;2021-04-28
4. Device Processing of Silicon Carbide;Fundamentals of Silicon Carbide Technology;2014-09-26
5. Secondary ion mass spectrometry of dopant and impurity elements in wide bandgap semiconductors;Materials Science and Engineering: R: Reports;2012-11