Secondary ion mass spectrometry of dopant and impurity elements in wide bandgap semiconductors-Reference-Cited by-同舟云学术

Secondary ion mass spectrometry of dopant and impurity elements in wide bandgap semiconductors

Published:2012-11 Issue:11-12 Volume:73 Page:101-128
ISSN:0927-796X
Container-title:Materials Science and Engineering: R: Reports
language:en
Short-container-title:Materials Science and Engineering: R: Reports

Author:

Wilson R.G.,Zavada J.M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference93 articles.

1. See, for example, the special issue on Light Emitting Diodes, in: M.J. Kumar, L. Lunardi, G. Meneghesso, S.J. Pearton, E.F. Schubert (Eds.), IEEE Electron Devices 57(1) (2010).

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3. Light-emitting Diodes;Schubert,2003

4. Introduction to Solid-State Lighting;Zukauskas,2002

5. Electrical characteristics of InGaN∕GaN light-emitting diodes grown on GaN and sapphire substrates

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