Electrically active and hydrogen passivated Zn in GaAs/AlGaAs specifically distinguished during secondary ion mass spectrometry depth profiling
Author:
Affiliation:
1. Łukasiewicz Research Network - Institute of Microelectronics and Photonics
2. 02-668 Warsaw
3. Poland
4. Institute of Experimental Physics
5. Faculty of Physics
6. VIGO SYSTEM
7. 05-850 Ożarów Mazowiecki
8. Warsaw University of Technology
Abstract
A novel method of measuring active and hydrogen-passivated (inactive) impurity depth profiles using Secondary Ion Mass Spectrometry.
Funder
Narodowe Centrum Badan i Rozwoju
Narodowe Centrum Nauki
Publisher
Royal Society of Chemistry (RSC)
Subject
Spectroscopy,Analytical Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2021/JA/D0JA00369G
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1. A Spreading Resistance Technique for Resistivity Measurements on Silicon
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3. Automatic generation of shallow electrically active dopant profiles from spreading resistance measurements
4. Characterization of ultrashallow dopant profiles using spreading resistance profiling
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