6H-silicon carbide devices and applications
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Blue LEDs, UV photodiodes and high-temperature rectifiers in 6H-SiC
2. Proc. First Int. High Temp. Electronics Conf.;Palmour,1991
3. High temperature operation of α-silicon carbide buried-gate junction field-effect transistors
4. A vertically integrated GaAs bipolar dynamic RAM cell with storage times of 4.5 h at room temperature
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1. Effects of thermal annealing on thermal conductivity of LPCVD silicon carbide thin films;Journal of Applied Physics;2023-10-24
2. Validation of Raman spectroscopy as a tool for mapping transport parameters in inhomogeneous N‐doped 4H‐SiC;Journal of Raman Spectroscopy;2023-05-11
3. SiC and GaN Power Devices;More-than-Moore Devices and Integration for Semiconductors;2023
4. Effect of hydrogen plasma treatment on the electrical properties for SiC-based power MOSFETs;Microelectronic Engineering;2022-04
5. First-principles study of In and Mn dopants on the magnetic and optical properties of 4H–SiC;Journal of Luminescence;2021-11
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