Dual configuration of shallow acceptor levels in 4H-SiC
Author:
Funder
Norges forskningsrad
Swedish Research Council
ETH Zürich
Energimyndigheten
Publisher
Elsevier BV
Reference40 articles.
1. Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications;Kimoto,2014
2. High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime;Zippelius;J. Appl. Phys.,2012
3. Enhanced annealing of the Z1/2 defect in 4H-SiC epilayers;Storasta;J. Appl. Phys.,2008
4. Reduction of deep levels and improvement of carrier lifetime in n-type 4H-SiC by thermal oxidation;Hiyoshi;Appl. Phys. Express,2009
5. Elimination of the major deep levels in n- and p-type 4H-SiC by two-step thermal treatment;Hiyoshi;Appl. Phys. Express,2009
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1. Electrically active defects induced by thermal oxidation and post-oxidation annealing of n-type 4H-SiC;Journal of Applied Physics;2024-05-09
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