Enhanced annealing of the Z1∕2 defect in 4H–SiC epilayers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2829776
Reference26 articles.
1. Electrically active defects inn-type 4H–silicon carbide grown in a vertical hot-wall reactor
2. Deep levels created by low energy electron irradiation in 4H-SiC
3. Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons
4. Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers
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