Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method
Author:
Affiliation:
1. Key Laboratory of Advanced Display and System Applications of Ministry of Education
2. Shanghai University
3. Shanghai 200072
4. China
5. College of Materials Science and Engineering
Abstract
In this paper, W-doped ZnSnO (WZTO) thin films and TFT devices are successfully fabricated by a wet-solution technique.
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2018/RA/C8RA02925C
Reference42 articles.
1. Influence of annealing temperatures on solution-processed AlInZnO thin film transistors
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3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
4. Dip-coated Al–In–Zn–O thin-film transistor with poly-methylmethacrylate gate dielectric
5. Effect of aluminum addition to solution-derived amorphous indium zinc oxide thin film for an oxide thin film transistors
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