Influence of annealing temperatures on solution-processed AlInZnO thin film transistors-Reference-Cited by-同舟云学术

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Influence of annealing temperatures on solution-processed AlInZnO thin film transistors

Published:2015-10 Issue: Volume:646 Page:675-679
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Gao Yana,Lu Jianguo,Zhang Jianhua,Li Xifeng

Funder

National High-tech R&D Program of China

Shanghai Science and Technology Commission

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference27 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature,2004

2. Effects of Hf incorporation on indium zinc oxide thin-film transistors using solution process;Li;Electron. Mater. Lett.,2015

3. Novel ZrInZnO thin-film transistor with excellent stability;Park;Adv. Mater.,2009

4. Dip-coated Al–In–Zn–O thin-film transistor with poly-methylmethacrylate gate dielectric;Yue;J. Phys. D: Appl. Phys.,2013

5. Effect of aluminum addition to solution-derived amorphous indium zinc oxide thin film for an oxide thin film transistors;Park;Microelectron. Eng.,2013

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1. Preparation and electrical properties of Ni-doped InZnO thin film transistors;Materials Science in Semiconductor Processing;2023-01

2. Preparation and electrical characteristics of Li–N co-doped InZnAlO thin film transistors by radio frequency magnetron sputtering;Vacuum;2022-11

3. Plasma-enhanced atomic layer deposition of aluminum-indium oxide thin films and associated device applications;Journal of Vacuum Science & Technology A;2022-05

4. Low-temperature fabrication of Pr-doped In₂O₃ electrospun nanofibers for flexible field-effect transistors;Journal of Materials Chemistry C;2022

5. The effect of post-metal annealing on the electrical performance and stability of two-step-annealed solution-processed In2O3 thin film transistors;Current Applied Physics;2021-03

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