Effect of aluminum addition to solution-derived amorphous indium zinc oxide thin film for an oxide thin film transistors-Reference-Cited by-同舟云学术

Effect of aluminum addition to solution-derived amorphous indium zinc oxide thin film for an oxide thin film transistors

Published:2013-09 Issue: Volume:109 Page:189-192
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Park Sung Min,Lee Dong Hee,Lim You Sung,Kim Dae Kuk,Yi Moonsuk

Funder

Korea government Ministry of Knowledge Economy

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Use of Highly-Ordered TiO2 Nanotube Arrays in Dye-Sensitized Solar Cells

2. In2O3 nanowires as chemical sensors

3. High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors

4. Zn-In-O based thin-film transistors: Compositional dependence

5. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

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